to our customers, old company name in catalogs and other documents on april 1 st , 2010, nec electronics corporation merged with renesas technology corporation, and renesas electronics corporation took over all the business of both companies. therefore, although the old company name remains in this document, it is a valid renesas electronics document. we appreciate your understanding. renesas electronics website: http://www.renesas.com april 1 st , 2010 renesas electronics corporation issued by: renesas electronics corporation (http://www.renesas.com) send any inquiries to http://www.renesas.com/inquiry.
notice 1. all information included in this document is current as of the date this document is issued. such information, however, is subject to change without any prior notice. before purchasing or using any renesas el ectronics products li sted herein, please confirm the latest product information with a renesas electronics sales office. also , please pay regular and careful attention to additional and different information to be disclosed by rene sas electronics such as that disclosed through our website. 2. renesas electronics does not assume any liability for infringeme nt of patents, copyrights, or other intellectual property ri ghts of third parties by or arising from the use of renesas electroni cs products or techni cal information descri bed in this document . no license, express, implied or otherwise, is granted hereby under any patents, copyri ghts or other intell ectual property right s of renesas electronics or others. 3. you should not alter, modify, copy, or otherwise misappropriate any re nesas electronics product, wh ether in whole or in part . 4. descriptions of circuits, software and other related informat ion in this document are provided only to illustrate the operat ion of semiconductor products and application examples. you are fully re sponsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. when exporting the products or technology described in this doc ument, you should comply with the applicable export control laws and regulations and follow the proc edures required by such laws and re gulations. you should not use renesas electronics products or the technology described in this docum ent for any purpose relating to mil itary applicati ons or use by the military, including but not l imited to the development of weapons of mass de struction. renesas electronics products and technology may not be used for or incor porated into any products or systems whose manufacture, us e, or sale is prohibited under any applicable dom estic or foreign laws or regulations. 6. renesas electronics has used reasonable care in preparing th e information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 7. renesas electronics products ar e classified according to the following three quality grades: ?standard?, ?high quality?, an d ?specific?. the recommended applications for each renesas electronics product de pends on the product?s quality grade, as indicated below. you must check the qua lity grade of each renesas electronics pr oduct before using it in a particular application. you may not use any renesas electronics produc t for any application categorized as ?speci fic? without the prior written consent of renesas electronics. further, you may not use any renesas electronics product for any application for which it is not intended without the prior written consent of renesas electronics. re nesas electronics shall not be in any way liable for any damages or losses incurred by you or third partie s arising from the use of any renesas electronics product for a n application categorized as ?specific? or for which the product is not intende d where you have failed to obtain the prior writte n consent of renesas electronics. the quality grade of each renesas electronics product is ?standard? unless otherwise expressly specified in a renesas electr onics data sheets or data books, etc. ?standard?: computers; office equipmen t; communications e quipment; test and measurement equipment; audio and visual equipment; home electronic a ppliances; machine tools; personal electronic equipmen t; and industrial robots. ?high quality?: transportation equi pment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; an ti- crime systems; safety equipment; and medical equipment not specif ically designed for life support. ?specific?: aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support device s or systems), surgical im plantations, or healthcare intervention (e.g. excision, etc.), and any other applicati ons or purposes that pose a di rect threat to human life. 8. you should use the renesas electronics pr oducts described in this document within the range specified by renesas electronics , especially with respect to the maximum ra ting, operating supply voltage range, movement power volta ge range, heat radiation characteristics, installation and other product characteristics. renesas electronics shall have no liability for malfunctions o r damages arising out of the use of renesas electronics products beyond such specified ranges. 9. although renesas electronics endeavors to improve the quality and reliability of its produc ts, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate a nd malfunctions under certain use conditions. fur ther, renesas electronics products are not subject to radiation resistance design. please be sure to implement safety measures to guard them against the possibility of physic al injury, and injury or damage caused by fire in the event of the failure of a renesas electronics product, such as safe ty design for hardware and software in cluding but not limited to redundancy, fire control and malfunction prevention, appropri ate treatment for aging degradation or an y other appropriate measures. because the evaluation of microcomputer software alone is very difficult , please evaluate the safety of the final products or system manufactured by you. 10. please contact a renesa s electronics sales office for details as to environmental matters such as the environmental compatibility of each renesas electronics product. please use renesas electronics products in compliance with all applicable laws and regulations that regul ate the inclusion or use of c ontrolled substances, including wi thout limitation, the eu rohs directive. renesas electronics assumes no liability for damage s or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. this document may not be reproduced or duplicated, in any form, in w hole or in part, without prio r written consent of renes as electronics. 12. please contact a renesa s electronics sales office if you have any questi ons regarding the informat ion contained in this document or renesas electroni cs products, or if you have any other inquiries. (note 1) ?renesas electronics? as used in this document means renesas electronics corporation and also includes its majority- owned subsidiaries. (note 2) ?renesas electronics product(s)? means any product developed or manufactured by or for renesas electronics.
1996 data sheet mos field effect transistor m pa603t the m pa603t is a mini-mold device provided with two mos fet circuits. it achieves high-density mounting and saves mounting costs. features ? two mos fet circuits in package the same size as sc-59 ? complement to m pa602t ? automatic mounting supported absolute maximum ratings (t a = 25 ?c) parameter symbol ratings unit drain to source voltage v dss C50 v gate to source voltage v gss +16 v drain current (dc) i d(dc) C100 ma drain current (pulse) i d(pulse) * C200 ma total power dissipation p t 300 (total) mw channel temperature t ch 150 ?c storage temperature t stg C55 to +150 ?c * pw 10 ms, dury cycle 50 % document no. g11250ej1v0ds00 (1st edition) date published june 1996 p printed in japan package dimensions (in millimeters) 0.32 +0.1 ?.05 1.5 2.8 ?.2 0.95 0.95 1.9 2.9 ?.2 0.16 +0.1 ?.06 0.8 1.1 to 1.4 0 to 0.1 0.65 +0.1 ?.5 pin connection (top view) p-channel mos fet (6-pin 2 circuits)
m pa603t 2 electrical characteristics (t a = 25 ?c) parameter symbol test conditions min. typ. max. unit drain cut-off current i dss v ds = e50 v, v gs = 0 e e e1.0 m a gate leakage current i gss v gs = +16 v, v ds = 0 e e +1.0 m a gate cut-off voltage v gs(off) v ds = e5.0 v, i d = e1.0 m a e1.5 e1.9 e2.5 v forward transfer admittance |y fs |v ds = e5.0 v, i d = e10 ma 15 e e ms drain to source on-state resistance r ds(on)1 v gs = e4.0 v, i d = e10 ma e 60 100 w drain to source on-state resistance r ds(on)2 v gs = e10 v, i d = e10 ma e 40 60 w input capacitance c iss v ds = e5.0 v, v gs = 0, f = 1.0 mhz e 17 e pf output capacitance c oss e9epf reverse transfer capacitance c rss e1epf turn-on delay time t d(on) v gs(on) = e4.0 v, r g = 10 w ,e45ens rise time t r v dd = e5.0 v, i d = e10 ma, r l = 500 w e75ens turn-off delay time t d(off) e25ens fall time t f e80ens marking: ja switching time measurement circuit and conditions pg. r g dut r l v dd t t = 1 s duty cycle 1 % m 0 v gs gate voltage waveform drain current waveform v gs i d 0 10 % v gs(on) i d 90 % t d(on) t r t d(off) t f 10 % 10 % 90 % 90 %
m pa603t 3 typical characteristics (t a = 25 ?c) derating factor of forward bias safe operating area dt - derating factor - % 0 100 80 60 40 20 t c - case temperature - ?c total power dissipation vs. ambient temperature p t - total power dissipation - mw 0 350 300 250 200 150 100 50 t a - ambient temperature - ?c drain current vs. drain to source voltage i d - drain current - ma 0 e120 e100 e80 e60 e40 e20 v ds - drain to source voltage - v transfer characteristics i d - drain current - ma 0 e100 e10 e1 e0.1 e0.01 e0.001 v gs - gate to source voltage - v gate to source cutoff voltage vs. channel temperature v gs(off) - gate cut-off voltage - v e30 e2.4 e2.2 e2.0 e1.8 e1.6 e1.4 e1.2 t ch - channel temperature - ?c forward transfer admittance vs. drain current |y fs | - forward transfer admittance - ms e1 100 i d - drain current ma free air v ds = e5.0 v pulsed measurement 40 20 60 80 100 120 140 160 25 50 75 100 125 150 per one unit total e2 e4 e6 e8 e10 e12 e14 pulsed measurement e8 v e6 v e4 v v gs = e2 v e5 e10 e15 t a = 150 ?c 75 ?c 25 ?c e25 ?c 0 30 60 90 120 150 v ds = e5.0 v i d = e1 a m 50 20 10 5 2 1 e2 e5 e10 e20 e50 e100 v ds = e5.0 v 25 ?c 75 ?c 150 ?c t a = e25 ?c
m pa603t 4 drain to source on-state resistance vs. gate to source voltage r ds(on) - drain to source on-state resistance - w 0 100 50 v gs - gate to source voltage - v drain to source on-state resistance vs. drain current r ds(on) - drain to source on-state resistance - w e1 150 100 50 0 i d - drain current - ma drain to source on-state resistance vs. channel temperature r ds(on) - drain to source on-state resistance - w e30 140 120 100 80 60 40 20 t ch - channel temperature - ?c capacitance vs. drain to source voltage c iss , c oss , c rss - capacitance - pf e0.5 50 v ds - drain to source voltage - v switching characteristics t d(on) , t r , t d(off) , t f - switching time - ns e5 500 i d - drain current - ma source to drain diode forward voltage i sd - source to drain current - ma 0.5 100 10 1 0.1 v sd - source to drain voltage - v pulsed measurement e4 e8 e12 e16 e20 i d = e1 ma i d = e10 ma e2 e5 e10 e20 e50 e100 t a = 150 ?c 75 ?c 25 ?c e25 ?c v gs = e4 v pulsed measurement 0 30 60 90 120 150 v gs = e4 v i d = e10 ma 100 20 10 5 2 1 0.5 0.2 0.1 e1 e2 e5 e10 e20 e50 e100 c iss c oss c rss v gs = 0 f = 1 mhz 200 100 50 20 10 5 e10 e20 e50 e100 e200 e500 t d(on) t f t d(off) v dd = e5.0 v v gs = e4 v r g = 10 w 0.6 0.7 0.8 0.9 1 t r
m pa603t 5 reference document name document no. nec semiconductor device reliability/quality control system tei-1202 quality grade on nec semiconductor devices iei-1209 semiconductor device mounting technology manual c10535e guide to quality assurance for semiconductor devices mei-1202 semiconductor selection guide x10679e
m p a603t no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. nec devices are classified into the following three quality grades: standard, special, and specific. the specific quality grade applies only to devices developed based on a customer designated quality assurance program for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard : computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special : transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific : aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices in standard unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact nec sales representative in advance. anti-radioactive design is not implemented in this product. m4 94.11
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